[ARC5] Question for Smart People: IGBT Transistors

[Fuqua, Bill L]

  Had a tech that called them Insulated Gate Blowup Transistors.

Naturally, you need to read the specs carefully.

73


Bill wa4lav

________________________________
From: ARC5 <arc5-bounces at mailman.qth.net> on behalf of David Stinson <arc5 at ix.netcom.com>
Sent: Friday, April 28, 2017 12:05 PM
To: boatanchors at mailman.qth.net; ARC-5
Subject: [ARC5] Question for Smart People: IGBT Transistors

Question for Smart People:
One of the specifications for high voltage
IGBT Transistor (thank you, Mr. Harshman
and a letter is on the way) is Vce when the
the transistor is in saturation.  Typically
3 or 4 volts.   Sort of like the newer FETs that
have a very low on-state resistance.

Am I correct to infer that when the IGBT is
saturated "ON," that 4 Volts at Ice is all
the transistor needs to dissipate?
For instance, if sourcing an Amp through
the transistor, IxV = 4 Watts dissipation.

Thanks,
Dave S.

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