[ARC5] Question for Smart People: IGBT Transistors

[J Mcvey]

For steady state saturation yes, for AC it would be greater depending on the type of signal.mosFets are better for switches because they can have on resistances in the milli-ohms range, thus less dissipation.
IGBTs have the c-e diode characteristic in saturation.
 

    On Friday, April 28, 2017 12:15 PM, David Stinson <arc5 at ix.netcom.com> wrote:
 

 Question for Smart People:
One of the specifications for high voltage
IGBT Transistor (thank you, Mr. Harshman
and a letter is on the way) is Vce when the
the transistor is in saturation.  Typically
3 or 4 volts.  Sort of like the newer FETs that
have a very low on-state resistance.

Am I correct to infer that when the IGBT is
saturated "ON," that 4 Volts at Ice is all
the transistor needs to dissipate?
For instance, if sourcing an Amp through
the transistor, IxV = 4 Watts dissipation.

Thanks,
Dave S.

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